2SB1020 データシートの表示（PDF） - New Jersey Semiconductor
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2SB1020 Datasheet PDF : 2 Pages
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Silicon PNP Darlingtion Power Transistor
2SB1020
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
-100
V
VcE(sat)-1 Collector-Emitter Saturation Voltage lc= -3A; IB= -6mA
VcE(sat)-2 Collector-Emitter Saturation Voltage lc=-7A;lB=-14mA
VeE(sat) Base-Emitter Saturation Voltage
lc= -3A; IB= -6mA
ICBO
Collector Cutoff Current
VCB=-100V; IE=0
-1.5
V
-2.0
V
-2.5
V
-100
uA
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
VEB= -5V; lc= 0
lc= -3A; VCE= -3V
2000
-4.0
mA
15000
hpE-2
DC Current Gain
lc= -7A; VCE= -3V
1000
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= -3.0A ,IB1= -Ie2= -6mA,
Vcc= -45V;RL=150
0.8
us
2.0
(J S
2.5
us
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