B1020 データシートの表示（PDF） - New Jersey Semiconductor
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B1020 Datasheet PDF : 2 Pages
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J
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Darlingtion Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1020
DESCRIPTION
• High DC C urrent Gain-
: hFE= 2000(Min.)@lc= -3A
• Low Collector Saturation Voltage-
:VCE(sat)=-1.5V(Max)@lc=-3A
• Good Linearity of hFE
• Complement to Type 2SD1415
f
23
-2
rHf
U t* *
S
l>
— I— VvV—
-:Base
Colle ctox~
Enitt er
TO-2201 a pad
APPLICATIONS
• High power switching applications.
• Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
*— B —-
f. I
1
A
\ it
H
t
K
,-F
•j. '
VCEO Collector-Emitter Voltage
-100
V
V
VEBO
Emitter-Base Voltage
-5
V
:Nr°
mm
Ic
Collector Current-Continuous
-7
A
DIM WIN MAX
A 16.85 17.15
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25'C
PC
Collector Power Dissipation
@ TC=25"C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.2
A
2
W
30
150
•c
-55-150
•c
B 9.54 10.10
C 4,35 4.65
D 0,75 0.90
F 3,20 3,40
G 6.90 7.20
H 5.15 5.45
J 0.45 0.75
K 13,35 13.65
L 1,10 1,30
N 4.98 5.13
Q 4,35 5,15
R 2.S5 3.25
s 2.70 2.90
u 1,75 2.05
V 1.30 1.50
IV
Qualify Semi-Conductors
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