P2682-01 データシートの表示（PDF） - Hamamatsu Photonics

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P2682-01

PbS photoconductive detector

Hamamatsu Photonics 

PbS photoconductive detector P2532-01, P2682-01

s Spectral response

100

-20 ˚C

80

-10 ˚C

60

25 ˚C

40

(Typ.)

20

0

1

2

3

4

5

WAVELENGTH (µm)

KIRDB0279EA

s S/N vs. chopping frequency

103

(Typ. Ta=25 ˚C)

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 4.8 µW/cm2

SUPPLY VOLTAGE: 15 V

tr: 200 µs

S/N

S

102

s S/N vs. supply voltage

800

(Typ. Ta=25 ˚C)

8

7

SIGNAL

600

6

5

400

4

NOISE

3

200

0

0

2

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 4.8 µW/cm2

1

CHOPPING FREQUENCY: 600 Hz

FREQUENCY BANDWIDTH: 60 Hz

0

10

20

30

40

50

60

SUPPLY VOLTAGE (V)

If voltage of higher than 60 V is applied,

the noise increases exponentially, de-

grading the S/N. The device should be

operated at 60 V or less.

KIRDB0046EA

s Photo sensitivity temperature characteristic

103

(Typ.)

102

N

101

101

102

103

CHOPPING FREQUENCY (Hz)

KIRDB0047EB

Increasing the chopping frequency re-

duces the 1/f noise and results in an S/N

improvement. The S/N can also be im-

proved by narrowing the noise bandwidth

using a lock-in amplifier.

s Dark resistance, rise time temperature characteristics

103

(Typ.)

DARK RESISTANCE

102 RISE TIME

101

-20 -10 0 10 20 30 40 50 60

ELEMENT TEMPERATURE (˚C)

KIRDB0049EB

2

LIGHT SOURCE: BLACK BODY 500 K

INCIDENT ENERGY: 4.8 µW/cm2

CHOPPING FREQUENCY: 600 Hz

SUPPLY VOLTAGE: 15 V

101

-20 -10 0 10 20 30 40 50 60

ELEMENT TEMPERATURE (˚C)

KIRDB0048EB

Cooling the device enhances its sensi-

tivity, but the sensitivity also depends

on the load resistance in the circuit.

s Photo sensitivity linearity

102

(Typ. Ta=25 ˚C, FULLY ILLUMINATED)

101

100

10-1

10-2

DEPENDENT ON NEP

10-3

10-9

10-8

10-7

10-6

10-5

10-4

INCIDENT ENERGY (W/cm2)

KIRDB0050EA

By making the incident light spot smaller

than the active area, the upper limit of

the linearity becomes lower.

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