A63L73321(2000) データシートの表示（PDF） - AMIC Technology

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A63L73321
(Rev.:2000)

128K X 32 Bit Synchronous High Speed SRAM with Burst Counter and Flow-through Data Output

AMIC Technology 

A63L73321

DC Electrical Characteristics

(0°C ≤ TA ≤ 70°C, VCC, VCCQ = 3.3V+10% or 3.3V-5%, unless otherwise noted)

Symbol

Parameter

Min.

Max.

Unit

Test Conditions

ILI

Input Leakage Current

-

±2.0

µA

All inputs VIN = GND to VCC

ILO

Output Leakage Current

-

±2.0

µA

OE = VIH, Vout = GND to VCC

ICC1

Supply Current

Device selected; VCC = max.

-

350

mA Iout = 0mA, all inputs = VIH or VIL

Cycle time = tKC min.

ISB1

Standby Current

Device deselected; VCC = max.

All inputs are fixed.

-

25

mA All inputs ≥ VCC - 0.2V

or ≤ GND + 0.2V

Cycle time = tKC min.

ISB2

-

10

mA ZZ ≥ VCC - 0.2V

VOL

Output Low Voltage

-

0.4

V

IOL = 8 mA

VOH

Output High Voltage

2.4

-

V

IOH = -4 mA

Note

3, 11

11

Capacitance

Symbol

Parameter

CIN

Input Capacitance

CI/O

Input/Output Capacitance

* These parameters are sampled and not 100% tested.

Typ.

Max.

Unit

3

4

pF

4

5

pF

Conditions

TA = 25 C; f = 1MHz

VCC = 3.3V

PRELIMINARY (August, 2000, Version 0.4)

8

AMIC Technology, Inc.

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