EDL1216BASA-75-E データシートの表示（PDF） - Elpida Memory, Inc

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EDL1216BASA-75-E

Mobile RAM

Elpida Memory, Inc 

Features

1. Low Power-Supply Voltage:

Supply Voltage (VDD)

Input/output Voltage (VDDQ)

Mobile RAM

2.5V ± 0.2V

1.8V ± 0.15V

1.8V ± 0.15V 2.5V ± 0.2V 1.8V ± 0.15V

Standard SDRAM

3.3V

3.3V

2. Low Power Operation:

2-1. Normal self refresh current

Self Refresh Current (IDD6) (MAX.)

Mobile RAM

350µA

Standard SDRAM

2,000µA

2-2. Mobile RAM-specific function for low power consumption

• Partial Array Self Refresh:

Refreshes only a certain portion of the memory cell array to reduce the self-refresh current.

• Temperature Compensated Self Refresh:

Adjusts the refresh frequency in response to changes in temperature to reduce the self-refresh current.

• Deep Power Down:

Cuts internal voltage supply to achieve maximum power reduction.

3. High-Speed Operation:

• 100MHz at CAS Latency 3 (CL = 3) (VDD = 1.8V)

• 133MHz at CAS Latency 3 (CL = 3) (VDD = 2.5V)

4. Wide Temperature Range:

Operating Temperature

Mobile RAM

-25 to +85 °C

Standard SDRAM

0 to 70 °C

5. Organization: 16-bit organization

6. Small Package:

54-ball FBGA (Fine-pitch Ball Grid Array) 8.0mm × 8.0mm × 1.0mm, 0.8mm ball pitch

7. Lead Free (Su − Ag − Cu)

8. Fully compatible with JEDEC Low Power SDRAM

Document No. E0188E40 (Ver.4.0)

The information in this document is subject to change without notice.

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