UPD45128163 データシートの表示（PDF） - NEC => Renesas Technology

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UPD45128163

128M-bit Synchronous DRAM 4-bank, LVTTL

NEC => Renesas Technology 

µPD45128441, 45128841, 45128163

Self refresh entry command

(/CS, /RAS, /CAS, CKE = Low, /WE = High)

After the command execution, self refresh operation continues while

CKE remains low. When CKE goes high, the µPD45128xxx exits the

self refresh mode.

During self refresh mode, refresh interval and refresh operation are

performed internally, so there is no need for external control.

Before executing self refresh, all banks must be precharged.

Fig.7 Self refresh entry command

CLK

CKE

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

Burst stop command

(/CS, /WE = Low, /RAS, /CAS = High)

This command can stop the current burst operation.

Fig.8 Burst stop command in Full Page

Mode

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

No operation

(/CS = Low, /RAS, /CAS, /WE = High)

This command is not an execution command. No operations begin

or terminate by this command.

Fig.9 No operation

CLK

CKE H

/CS

/RAS

/CAS

/WE

BA0(A13), BA1(A12)

A10

Add

Data Sheet M12650EJBV0DS00

13

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