AM1517-025 データシートの表示（PDF） - STMicroelectronics

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AM1517-025

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

STMicroelectronics 

AM1517-025

RF & MICROWAVE TRANSISTORS

SATELLITE COMMUNICATIONS APPLICATIONS

• REFRACTORY/GOLD METALLIZATION

• EMITTER SITE BALLASTED

• ∞:1 VSWR CAPABILITY

• LOW THERMAL RESISTANCE

• INPUT/OUTPUT MATCHING

• OVERLAY GEOMETRY

• METALLIC/CERAMIC HERMETIC PACKAGE

• POUT = 25 W MIN. WITH 8.5 dB GAIN

SO42

hermetically sealed

ORDER CODE

AM1517-025

BRANDING

1517-25

DESCRIPTION

The AM1517-025 power transistor is designed

specifically for Satellite communications applica-

tions in the 1.5 - 1.7 frequency range.

The device is capable of withstanding any mis-

match load condition at any phase angle (VSWR

∞:1) under full rated conditions. The unit is an

overlay, emitter site ballasted, geometry utilizing a

refractory/Gold metallization system.

The AM1517-025 is supplied in the AMPACTM

Hermetic/Ceramic package with internal Input/

Output matching structures.

ABSOLUTE MAXIMUM RATINGS(TCASE = 25 0C)

Symbol

Parameter

PDISS

IC

Power Dissipation* ( Tc≤ 50 0C)

Device Current*

VCC

Collector-Supply Voltage*

Tj

Junction Temperature

TSTG Storage Temperature

THERMAL DATA

Rth(j-c) Junction-Case Thermal Resistance*

* Applies only to rated RF amplifier operation

May 2000

PIN CONNECTION

1

4

2

3

1. Collector

2. Base

3. Emitter

4. Base

Value

45

2.5

30

200

-65 to +200

3.3

Unit

W

A

V

0C

0C

0C/W

1/8

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