CM900DU-24NF データシートの表示（PDF） - Powerex

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CM900DU-24NF

Mega Power Dual™ IGBTMOD 900 Amperes/1200 Volts

Powerex 

Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM900DU-24NF

Mega Power Dual™ IGBTMOD

900 Amperes/1200 Volts

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings

Symbol

Junction Temperature

Storage Temperature

Collector-Emitter Voltage (G-E SHORT)

Gate-Emitter Voltage (C-E SHORT)

Collector Current (TC = 25°C)

Peak Collector Current (Tj ≤ 150°C)

Emitter Current (TC = 25°C)**

Peak Emitter Current**

Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C)

Mounting Torque, M6 Mounting Screws

Tj

Tstg

VCES

VGES

IC

ICM

IE

IEM

PC

–

Mounting Torque, M6 Main Terminal Screw

–

Weight (Typical)

–

Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)

Viso

CM900DU-24NF

-40 to 150

-40 to 125

1200

±20

900

1800*

900

1800*

5950

40

40

1400

2500

Units

°C

°C

Volts

Volts

Amperes

Amperes

Amperes

Amperes

Watts

in-lb

in-lb

Grams

Volts

Static Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Collector-Cutoff Current

ICES

VCE = VCES, VGE = 0V

Gate Leakage Current

IGES

VGE = VGES, VCE = 0V

Gate-Emitter Threshold Voltage

Collector-Emitter Saturation Voltage

(Without Lead Resistance)

Module Lead Resistance

Total Gate Charge

Emitter-Collector Voltage**

VGE(th)

VCE(sat)

(Chip)

R(lead)

QG

VEC

IC = 90mA, VCE = 10V

IC = 900A, VGE = 15V, Tj = 25°C

IC = 900A, VGE = 15V, Tj = 125°C

IC = 900A, Terminal-chip

VCC = 600V, IC = 900A, VGE = 15V

IE = 900A, VGE = 0V

Min.

Typ.

Max. Units

–

–

1

mA

–

–

0.5

µA

6

7

8

Volts

–

1.9

2.5

Volts

–

2.1

–

Volts

–

0.143 –

mΩ

–

4800

–

nC

–

–

3.4

Volts

Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Inductive

Turn-on Delay Time

Load

Rise Time

Switch

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time**

Diode Reverse Recovery Charge**

Cies

Coes

Cres

td(on)

tr

td(off)

tf

trr

Qrr

–

VCE = 10V, VGE = 0V

–

–

VCC = 600V,

–

IC = 900A, IE = 900A,

–

VGE1 = VGE2 = 15V,

–

RG = 1.0⍀,

–

Inductive Load

–

Switching Operation

–

* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Typ.

–

–

–

–

–

–

–

–

50

Max.

140

16

3

300

200

800

300

500

–

Units

nF

nF

nF

ns

ns

ns

ns

ns

µC

2

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