CM50TJ-24F データシートの表示（PDF） - Powerex

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CM50TJ-24F

Trench Gate Design Six IGBTMOD™ 50 Amperes/1200 Volts

Powerex 

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

CM50TJ-24F

Trench Gate Design Six IGBTMOD™

50 Amperes/1200 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Inductive

Turn-on Delay Time

Load

Rise Time

Switch

Turn-off Delay Time

Times

Fall Time

Diode Reverse Recovery Time**

Diode Reverse Recovery Charge**

Cies

Coes

Cres

td(on)

tr

td(off)

tf

trr

Qrr

–

VCE = 10V, VGE = 0V, f = 1MHz

–

–

VCC = 600V,

–

IC = 50A,

–

VGE1 = VGE2 = 15V,

–

RG = 6.3⍀,

–

Inductive Load

–

Switching Operation

–

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics

Symbol

Test Conditions

Min.

Thermal Resistance, Junction to Case

Rth(j-c)Q

Per IGBT 1/6 Module, Tc Reference

–

Point per Outline Drawing

Thermal Resistance, Junction to Case

Rth(j-c)D

Per FWDi 1/6 Module, Tc Reference

–

Point per Outline drawing

Thermal Resistance, Junction to Case

Rth(j-c)'Q

Per IGBT 1/6 Module,

–

Tc Reference Point Under Chip

Thermal Resistance, Junction to Case

Rth(j-c)'D Per FWDi 1/6 Module, Tc Reference

–

Tc Reference Point Under Chip

Contact Thermal Resistance

Rth(c-f)

Per Module, Thermal Grease Applied

–

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

Typ.

Max. Units

–

20

nf

–

0.85

nf

–

0.80

nf

–

100

ns

–

50

ns

–

300

ns

–

300

ns

–

150

ns

2.1

–

µC

Typ.

Max. Units

–

0.57 °C/W

–

0.96 °C/W

0.34 –

°C/W

0.45 –

°C/W

0.13 –

°C/W

3

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