RFM12N40 データシートの表示（PDF） - Intersil

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RFM12N40

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Intersil 

Semiconductor

September 1998

RFM12N35,

RFM12N40

12A, 350V and 400V, 0.500 Ohm,

N-Channel Power MOSFETs

[ /Title

(RFM12

N35,

RFM12

N40)

/Sub-

ject

(12A,

350V

and

400V,

0.500

Ohm,

N-Chan-

nel

Power

MOS-

FETs)

/Author

()

/Key-

words

(12A,

350V

and

400V,

0.500

Ohm,

N-Chan-

nel

Power

MOS-

FETs)

/Cre-

ator ()

/DOCIN

Features

• 12A, 350V and 400V

• rDS(ON) = 0.500Ω

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFM12N35

TO-204AA

RFM12N35

RFM12N40

TO-204AA

RFM12N40

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits.

Formerly developmental type TA17434.

Symbol

D

Packaging

DRAIN

(FLANGE)

JEDEC TO-204AA

G

S

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1998

5-1

File Number 1787.1

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