IRF7303TR データシートの表示（PDF） - International Rectifier
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IRF7303TR Datasheet PDF : 9 Pages
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IRF7303
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.032 –––
––– ––– 0.050
––– ––– 0.080
V/°C
Ω
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 2.4A
VGS = 4.5V, ID = 2.0A
1.0 ––– ––– V VDS = VGS, ID = 250µA
5.2 ––– ––– S
––– ––– 1.0
µA
––– ––– 25
––– ––– 100 nA
––– ––– -100
VDS = 15V, ID = 2.4A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125 °C
VGS = 20V
VGS = - 20V
––– ––– 25
ID = 2.4A
––– ––– 2.9
––– ––– 7.9
nC VDS = 24V
VGS = 10V, See Fig. 6 and 12
––– 6.8 –––
VDD = 15V
––– 21 ––– ns ID = 2.4A
––– 22 –––
RG = 6.0Ω
––– 7.7 –––
RD = 6.2Ω, See Fig. 10
D
––– 4.0 –––
nH Between lead tip
and center of die contact G
––– 6.0 –––
S
––– 520 –––
VGS = 0V
––– 180 ––– pF VDS = 25V
––– 72 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
V SD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 2.5
––– ––– 20
––– ––– 1.0
––– 47 71
––– 56 84
MOSFET symbol
D
showing the
A
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = 1.8A, VGS = 0V
ns TJ = 25°C, IF = 2.4A
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 2.4A, di/dt ≤ 73A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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