RFD16N03 データシートの表示（PDF） - Fairchild Semiconductor
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RFD16N03 Datasheet PDF : 8 Pages
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RFD16N03L, RFD16N03LSM
Typical Performance Curves Unless Otherwise Specified (Continued)
200
100
STARTING TJ = 25oC
10
STARTING TJ = 150oC
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV=(L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1]
1
0.001
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
100
VGS = 10V
75
50
VGS = 5V
VGS = 4.5V
VGS = 4V
25
0
0
VGS = 3.5V
PULSE DURATION = 250µs, TC = 25oC VGS = 3V
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
-55oC
75
50
175oC
25oC
25
0
0
1.5
3.0
4.5
6.0
7.5
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
100
ID = 32A
75
ID = 16A
ID = 8A
50
ID = 2A
25 TJ = 25oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
250
VDD = 15V, IDD = 16A, RL = 0.93Ω
200
150
100
50
tr
tf
td(ON)
td(OFF)
0
0
10
20
30
40
50
RGS, GATE TO SOURCE RESISTANCE (Ω)
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
2.0 VGS = 5V, ID = 16A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
1.5
1.0
0.5
0
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2002 Fairchild Semiconductor Corporation
RFD16N03L, RFD16N03LSM Rev. B
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