NE651R479A-T1 データシートの表示（PDF） - NEC => Renesas Technology
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NE651R479A-T1 Datasheet PDF : 8 Pages
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APPLICATION CIRCUIT EXAMPLE
f = 1.9 GHz (Unit: mm)
VGS
VDS
Tantalum Condenser
47 µF
Rg
1 000 p
NE651R479A
Tantalum Condenser
100 µF
λ /4 OPEN STUB
2
C1 6
3
INPUT
5
43
λ /4 LINE
λ /4 OPEN STUB
12
5
6
3
3
5 2 2 7 2 8 12
C2
50 Ω LINE OUTPUT
f = 1.9 GHZ
VDS = 3.5 V
IDset = 50 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
Rg = 1 kΩ
APPLICATION CIRCUIT EXAMPLE
f = 900 MHz (Unit: mm)
VGS
VDS
Tantalum Condenser
47 µF
Rg
1 000 p
GND
Substrate: Teflon glass (ε r = 2.6)
t = 0.8 mm
Tantalum Condenser
100 µF
2
C1
INPUT
λ /4 OPEN STUB
λ /4 LINE
λ /4 OPEN STUB
5
3
9
3
R1
4
R2 4
C3
29 2
C4 C5
4
4
3
2 10
3
C6
13 5
50 Ω LINE
5
3
C2
C7
94
OUTPUT
f = 900 MHZ
VDS = 3.5 V
IDset = 50 mA (RF OFF)
C1 = 30 pF
C2 = 30 pF
C3 = 1 000 pF
C4 = 6 pF
C5 = 3 pF
C6 = 6 pF
C7 = 1 pF
R1 = 5.1 Ω
R2 = 30 Ω
Rg = 1 kΩ
Data Sheet P13670EJ2V0DS00
GND
Substrate: Teflon glass (ε r = 2.6)
t = 0.8 mm
5
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