BSP170E6327 データシートの表示（PDF） - Siemens AG

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BSP170E6327

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 170

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current IS

TA = 25 °C

-

Inverse diode direct current,pulsed

ISM

TA = 25 °C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = -3.4 A

-

Reverse recovery time

trr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 30 V, IF=lS, diF/dt = 100 A/µs

-

A

-

-1.7

-

-6.8

V

-0.9

-1.2

ns

80

-

µC

0.23 -

Semiconductor Group

4

22/05/1997

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