Q67000-S データシートの表示（PDF） - Siemens AG

部品番号

コンポーネント説明

一致するリスト

Q67000-S

SIPMOS ® Small-Signal Transistor

Siemens AG 

BSP 170

Maximum Ratings

Parameter

Chip or operating temperature

Storage temperature

Thermal resistance, chip to ambient air 1)

Thermal resistance, junction-soldering point 1)

IEC climatic category, DIN IEC 68-1

Symbol

Tj

Tstg

RthJA

RthJS

Values

Unit

-55 ... + 150 °C

-55 ... + 150

≤ 70

K/W

≤ 10

55 / 150 / 56

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain- source breakdown voltage

VGS = 0 V, ID = -0.25 mA, Tj = 25 °C

Gate threshold voltage

VGS=VDS, ID = -1 mA

Zero gate voltage drain current

VDS = -60 V, VGS = 0 V, Tj = 25 °C

VDS = -60 V, VGS = 0 V, Tj = 125 °C

Gate-source leakage current

VGS = -20 V, VDS = 0 V

Drain-Source on-state resistance

VGS = -10 V, ID = -1.7 A

V(BR)DSS

-60

VGS(th)

-2.1

IDSS

-

-

IGSS

-

RDS(on)

-

V

-

-

-3

-4

µA

-0.1

-1

-10

-100

nA

-10

-100

Ω

0.255 0.35

Semiconductor Group

2

22/05/1997

Share Link: