STS4DPFS30L データシートの表示（PDF） - STMicroelectronics
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STS4DPFS30L
STMicroelectronics
STS4DPFS30L Datasheet PDF : 8 Pages
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STS4DPFS30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 15V, ID = 3A RG = 4.7Ω
VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 24V, ID = 6A,
VGS = 4.5 V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 15 V, ID = 2A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
Vclamp = 24 V, ID = 6 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 5)
Min.
Min.
Typ.
25
35
12.5
5
3
Typ.
125
30
83
40
75
Max.
16
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 4 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 4 A, di/dt = 100A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR(*)
Reversed Leakage Current TJ = 25 °C , VR = 30 V
TJ = 125 °C , VR = 30 V
VF(*)
Forward Voltage Drop
TJ = 25 °C , IF = 3 A
TJ = 125 °C , IF = 3 A
Min. Typ. Max. Unit
4
A
16
A
1.2
V
45
ns
36
nC
1.6
A
Min.
Typ.
0.03
0.46
Max.
0.2
100
0.51
0.46
Unit
mA
mA
V
V
3/8
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