STS3DPFS30L データシートの表示（PDF） - STMicroelectronics
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STS3DPFS30L
STMicroelectronics
STS3DPFS30L Datasheet PDF : 5 Pages
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STS3DPFS30L
STripFET™
P - CHANNEL 30V - 0.13Ω - 3A S0-8
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
30V <0.16Ω
SCHOTTKY
IF(AV)
VRRM
3A
30V
ID
3A
VF(MAX)
0.51V
DESCRIPTION:
This product associates the latest low voltage
StripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS
ID
ID
IDM(•)
Ptot
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM
IF(RMS)
IF(AV)
Repetitive Peak Reverse Voltage
RMS Forward Current
Average Forward Current
IFSM Surge Non Repetitive Forward Current
TL=125 oC
δ =0.5
tp= 10 ms
Sinusoidal
IRSM Non Repetitive Peak Reverse Current
tp=100 µs
dv/dt Critical Rate Of Rise Of Reverse Voltage
(•) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
May 2000
Value
30
30
± 20
3
1.9
12
2
Value
30
20
3
75
1
10000
Unit
V
V
V
A
A
A
W
Unit
V
A
A
A
A
V/µs
1/5
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