STS4PF20V データシートの表示（PDF） - STMicroelectronics
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STS4PF20V Datasheet PDF : 8 Pages
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STS4PF20V
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON(*)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 10 V
ID = 2 A
38
ns
tr
Rise Time
RG = 4.7 Ω
VGS = 4.5 V
39
ns
(Resistive Load, Figure 1)
Qg
Total Gate Charge
VDD= 10V ID= 4A VGS=4.5V
6.2
nC
Qgs
Gate-Source Charge
(see test circuit, Figure 2)
1
nC
Qgd
Gate-Drain Charge
1.4
nC
SWITCHING OFF(*)
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 10 V
ID = 2 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 1)
Vclamp = 16 V
ID = 4 A
RG = 4.7Ω,
VGS = 4.5 V
(Inductive Load, Figure 3)
Min.
Typ.
54
12
46
11
15
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE(*)
Symbol
Parameter
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 4 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulse width [ 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by TJMAX
ISD = 4 A
di/dt = 100A/µs
VDD = 15 V Tj = 150°C
(Inductive Load, Figure 3)
Min.
Typ.
20
13
1.3
Max.
4
16
1.2
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/8
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