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PBSS5350D Datasheet PDF - Nexperia B.V. All rights reserved

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PBSS5350D
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA
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PBSS5350D Datasheet PDF : PBSS5350D pdf     
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General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350D

Features and benefits
■ Low collector-emitter saturation
   voltage VCEsat
■ High current capability
■ High efficiency due to less heat
   generation
■ AEC-Q101 qualified
■ Smaller Printed-Circuit Board (PCB)
   area than for conventional transistors

Applications
■ Supply line switching circuits
■ Battery management applications
■ DC-to-DC conversion

 

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