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PBSS5160DS Datasheet PDF - Nexperia B.V. All rights reserved

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PBSS5160DS
NEXPERIA
Nexperia B.V. All rights reserved NEXPERIA
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PBSS5160DS Datasheet PDF : PBSS5160DS pdf     
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General description
PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160DS.

Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Applications
■ Dual low power switches (e.g. motors, fans)
■ Automotive applications

 

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