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MUR8100E データシート - Fairchild Semiconductor

部品番号コンポーネント説明メーカー
MUR8100E 8A, 1000V Ultrafast Diodes Fairchild
Fairchild Semiconductor Fairchild
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MUR8100E データシート PDF : MUR8100E pdf   
MURP810 image

The MUR8100E and RUR8100 are ultrafast diodes (trr < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

Features
• Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175°C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
• Avalanche Energy Rated
• Planar Construction

Applications
• Switching Power Supply
• Power Switching Circuits
• General Purpose

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