N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the HF and VHF bands. The transistor presents excellent performance as a linear amplifier in the HF band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched hFE groups.
SOT121B package. The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.