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BLC9G27LS-150AV Datasheet PDF - NXP Semiconductors.

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BLC9G27LS-150AV
NXP
NXP Semiconductors. NXP
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BLC9G27LS-150AV Datasheet PDF : BLC9G27LS-150AV pdf     
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General description
150 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications
■ RF power amplifier for W-CDMA base stations and multi carrier applications in the
   2496 MHz to 2690 MHz frequency range

 

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