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BF1107W Datasheet PDF - Philips Electronics

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BF1107W
Philips
Philips Electronics Philips
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BF1107W Datasheet PDF : BF1107W pdf     
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DESCRIPTION
The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between gate and drain protect against excessive input voltage surges. Drain and source are interchangeable.

FEATURES
• Currentless RF switch.

APPLICATIONS
• Various RF switching applications such as:
   - Passive loop through for VCR tuner
   - Transceiver switching.

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PDF
メーカー
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
Philips Electronics
N-channel dual-gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
NXP Semiconductors.
N-channel dual gate MOS-FETs
NXP Semiconductors.
N-channel dual-gate MOS-FETs
Philips Electronics
N-channel dual gate MOS-FETs
Philips Electronics
N-channel dual-gate MOS-FETs
Philips Electronics

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