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AP9998GH-HF Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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AP9998GH-HF
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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AP9998GH-HF Datasheet PDF : AP9998GH-HF pdf     
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Description:
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features:
1) VDS=100V,ID=36A,RDS(ON)<24mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.

 

部品番号
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PDF
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N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
Unspecified
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
N-Channel MOSFET uses advanced SGT technology
Unspecified

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