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AP9575AGJ-HF Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

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AP9575AGJ-HF
DOINGTER
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. DOINGTER
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AP9575AGJ-HF Datasheet PDF : AP9575AGJ-HF pdf     
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Description:
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with lowgate charge. It can be used in a wide variety of applications.

Features:
1) VDS=-60V,ID=-35A,RDS(ON)<28mΩ @VGS=-10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.

 

部品番号
コンポーネント説明
PDF
メーカー
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified
P-Channel MOSFET uses advanced trench technology
Unspecified

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