8000
6000
4000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
2000
0
1
C oes
C res
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4PC50S
20
VCC = 400V
I C = 41A
16
12
8
4
0
0
40
80
120
160
200
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10.0
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 41A
9.5
9.0
100 RG = O5.h0mΩ
VGE = 15V
VCC = 480V
10
IC = 82 A
IC = 41 A
IC =20.5 A
8.5
0
10
20
30
40
50
RRGG , Gaattee RReessisistatanncece( (ΩO)hm)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5