Philips Semiconductors
High-speed double diode
Product specification
BAS56
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VRRM
VRRM
VR
VR
IF
IFRM
IFSM
Ptot
Tstg
Tj
repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
series connection
series connection
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
single diode loaded
double diode loaded
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t = 10 ms
Tamb = 25 °C; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
MAX.
60
120
60
120
200
UNIT
V
V
V
V
mA
150 mA
600 mA
430 mA
−
9A
−
3A
−
1.7 A
−
250 mW
−65 +150 °C
−
150 °C
1996 Sep 10
3