IRF7530(2001) データシートの表示（PDF） - International Rectifier

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IRF7530
(Rev.:2001)

HEXFET® Power MOSFET

International Rectifier 

100

TOP

VGS

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

BOTTOM 2.25V

IRF7530

100

 TOP

VGS

7.00V

5.00V

4.50V

3.50V

3.00V

2.70V

2.50V

BOTTOM 2.25V

2.25V

10

0.1

 20µs PULSE WIDTH

TJ = 25 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

2.25V

10

0.1

 20µs PULSE WIDTH

TJ = 150 °C

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

 TJ = 25°C

 TJ = 150° C

10

2.0

 V DS= 15V

20µs PULSE WIDTH

2.5

3.0

3.5

4.0

4.5

VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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2.0  ID = 5.0A

1.5

1.0

0.5

 VGS = 4.5V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

3

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