IRF120 データシートの表示（PDF） - Intersil

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IRF120

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

Intersil 

Semiconductor

October 1997

IRF120, IRF121,

IRF122, IRF123

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm,

N-Channel, Power MOSFETs

Features

• 8.0A and 9.2A, 80V and 100V

• rDS(ON) = 0.27Ω and 0.36Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF120

TO-204AA

IRF120

IRF121

TO-204AA

IRF121

IRF122

TO-204AA

IRF122

IRF123

TO-204AA

IRF123

NOTE: When ordering, use the entire part number.

Description

These are N-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching conver-

tors, motor drivers, relay drivers, and drivers for high power

bipolar switching transistors requiring high speed and low

gate drive power. These types can be operated directly from

integrated circuits.

Formerly developmental type TA09594.

Symbol

D

G

S

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

GATE (PIN 1)

SOURCE (PIN 2)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

Copyright © Harris Corporation 1997

2-1

File Number 1565.2

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