BD650(2012) データシートの表示（PDF） - Comset Semiconductors

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BD650
(Rev.:2012)

SILICON DARLINGTON POWER TRANSISTORS

Comset Semiconductors 

SEMICONDUCTORS

BD644 – 646 – 648 – 650 – 652

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

-ICBO

-ICEO

-IEBO

-VCE(SAT)

-VBE(SAT)

Collector Cutoff

Current

Collector Cutoff

Current

Emitter Cutoff Current

Collector-Emitter

saturation Voltage (*)

Base-Emitter

Saturation Voltage (*)

-IE=0,-VCB =-VCEOMAX

-IE=0,-VCB =1/2 -

VCBOMAX, TJ=150°C

-IE=0, -VCE =1/2 -

VCEOMAX

-VEB=5 V, -IC=0

-IC=4 A, -IB=16 mA

-IC=3 A, -IB=12 mA

-IC=5 A, -IB=50 mA

-IC=12 A, -IB=50 mA

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

BD644

BD646

BD648

BD650

BD652

Min Typ Max Unit

-

- 0.1 mA

-

-

1 mA

-

- 0.2 mA

-

- 5.0 mA

-

-

2

-

-

2

V

-

- 2.5

-

-

3

V

18/10/2012

COMSET SEMICONDUCTORS

3|5

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