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LM5113QDPRRQ1 データシート - Texas Instruments

部品番号LM5113QDPRRQ1 Texas-Instruments
Texas Instruments Texas-Instruments
コンポーネント説明Automotive 90-V, 1.2-A, 5-A, Half Bridge GaN Driver
LM5113QDPRRQ1 PDF データシート : LM5113QDPRRQ1 pdf   
LM5113-Q1 image

Description
The LM5113-Q1 is designed to drive both the highside and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gatesource voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
   
Features
• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results:
    – Device Temperature Grade 1: –40°C to 125°C
        Ambient Operating Temperature Range
    – Device HBM ESD Classification Level 1C
    – Device CDM ESD Classification Level C6
• Independent High-Side and Low-Side
    TTL Logic Inputs
• 1.2-A Peak Source, 5-A Peak Sink Output Current
• High-Side Floating Bias Voltage Rail
    Operates up to 100-VDC
• Internal Bootstrap Supply Voltage Clamping
• Split Outputs for Adjustable
    Turnon and Turnoff Strength
• 0.6-Ω Pulldown, 2.1-Ω Pullup Resistance
• Fast Propagation Times (28 ns Typical)
• Excellent Propagation Delay Matching
    (1.5 ns Typical)
• Supply Rail Undervoltage Lockout
• Low Power Consumption
   
Applications
• Mobile Wireless Chargers
• Audio Power Amplifiers
• Audio Power Supplies
• Current-Fed Push-Pull Converters
• Half- and Full-Bridge Converters
• Synchronous Buck Converters
   

 
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