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FQPF4N60 データシート - Tiger Electronic

FQPF4N60 600V N-Channel MOSFET TGS
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FQPF4N60 データシート PDF : FQPF4N60 pdf   
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These N-Channel enhancement mode power field effect transistors are produced using proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.


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