datasheetbank_Logo     データシート検索エンジンとフリーデータシート
ホーム  >>>  OKI  >>> MR27V3255D PDF

MR27V3255D データシート - Oki Electric Industry

部品番号コンポーネント説明メーカー
MR27V3255D 1,048,576-Double Word x 32-Bit or 2,097,152-Word x 16-Bit 8-Double Word x 32-Bit or 16-Word x 16-Bit Page Mode One Time PROM OKI
Oki Electric Industry OKI
その他の PDF  利用不可。
MR27V3255D データシート PDF : MR27V3255D pdf   
MR27V3255D image

DESCRIPTION
The MR27V3255D is a 32Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 1,048,576 double word x 32bit and 2,097,152 word x 16bit. The MR27V3255D operates on a single +3.3V power supply and is TTL compatible. The MR27V3255D provides Page mode which can greatly reduce the read access time. Since the MR27V3255D operates asynchronously , external clocks are not required , making this device easy to-use. The MR27V3255D is suitable as large-capacity fixed memory for microcomputers and data terminals. It is manufactured using a CMOS double silicon gate technology and is offered in 70-pin SSOP or 70-pin TSOP packages.

FEATURES
• 1,048,576 double word x 32bit / 2,097,152 word x 16bit electrically switchable configuration
• Single +3.3V power supply
• Access time 80ns Page mode access time 25ns
• Input / Output TTL compatible
• Three-state output
• Packages
          70-pin plastic SSOP (SSOP70-P-500-0.80-K) (Product name : MR27V3255DMB)
          70-pin plastic TSOP (TSOP II 70-P-400-0.65-K) (Product name : MR27V3255DTA)

 

ページリンク(HTML): 1  2  3  4  5  6  7  8  9  10 

 

MR27V3255Dと関連しているデータシートの一覧

部品番号コンポーネント説明PDFメーカー
M6MGB160S2BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY M6MGB160S2BVP View MITSUBISHI ELECTRIC
M6MGB160S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY M6MGB160S4BVP View MITSUBISHI ELECTRIC
M6MGB162S4BVP 16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) M6MGB162S4BVP View MITSUBISHI ELECTRIC
MEJ02C2016_M5M5J167KT 16777216-BIT (1048576-WORD BY 16-BIT / 2097152-WORD BY 8-BIT) CMOS STATIC RAM MEJ02C2016_M5M5J167KT View Hitachi -> Renesas Electronics
TC51WHM516AXBN65 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM TC51WHM516AXBN65 View Toshiba
HN27C4000G 524288-Word ×8-Bit/262144-Word ×16-Bit CMOS UV Erasable and Programmable ROM HN27C4000G View Hitachi -> Renesas Electronics
M5M29GB/T161BWG 16,777,216-BIT (1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY M5M29GB/T161BWG View MITSUBISHI ELECTRIC
6V62160E 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 6V62160E View LAPIS Semiconductor Co., Ltd.
M6M80041P 4096-BIT (256-WORD BY 16-BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM M6M80041P View MITSUBISHI ELECTRIC
HN58X2402SFPIE Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) HN58X2402SFPIE View Renesas Electronics

Share Link : 

English 简体中文 한국어 русский español


All Rights Reserved © datasheetbank.com 2014 - 2019  [ 個人情報保護方針 ] [ リクエストデータシート ]