MCM69L738AZP8.5 データシート - Motorola => Freescale

部品番号	MCM69L738AZP8.5	Motorola => Freescale
コンポーネント説明	4M Late Write 2.5 V I/O
MCM69L738AZP8.5 PDF データシート :

The MCM69L738A/820A is a 4 megabit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69L820A organized as 256K words by 18 bits, and the MCM69L738A organized as 128K words by 36 bits wide are fabricated in Motorola’s high performance silicon gate BiCMOS technology.

• Byte Write Control
• Single 3.3 V + 10%, – 5% Operation
• 2.5 V I/O (VDDQ)
• Register to Latch Synchronous Operation
• Asynchronous Output Enable
• Boundary Scan (JTAG) IEEE 1149.1 Compatible
• Differential Clock Inputs
• Optional x18 or x36 organization
• MCM69L738A/820A–8.5 = 8.5 ns
    MCM69L738A/820A–9 = 9 ns
    MCM69L738A/820A–9.5 = 9.5 ns
• Sleep Mode Operation (ZZ Pin)
• 119 Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array
    (PBGA) Package

Other manufacturer searches related to MCM69L738AZP8.5

GS8170DW36C	18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM™	Giga Semiconductor
NF2EB-12V	(NF Relays) Flatpack Relay	Matsushita Electric Works
2N660	SCRs	Central Semiconductor
NAS1832	Potted in Inserts are the standard for fastening in composite or honeycomb panels	Unspecified
EM6A9320BI	4M x 32 DDR SDRAM	Etron Technology
GS8170DW36AC	18Mb Σ1x1Dp CMOS I/O Double Late Write SigmaRAM™	Giga Semiconductor
BH6628AFS	Read / Write amplifier for FDD	ROHM Semiconductor
E5552	Read/Write identification IC with 1 KBit Memory	Temic Semiconductors
L6570A	2-CHANNEL FLOPPY DISK READ/WRITE CIRCUITS	STMicroelectronics
HA166008MP	Read/Write Circuit	Hitachi -> Renesas Electronics

Share Link :

Language : English 简体中文 한국어 русский español