| ホーム >>> KERSEMI >>> FQPF4N60 PDF |
FQPF4N60 データシート - Kersemi Electronic Co., Ltd.
| 部品番号 | コンポーネント説明 | メーカー |
| FQPF4N60 | 600V N-Channel MOSFET |  Kersemi Electronic Co., Ltd.  |
| その他の PDF | 利用不可。 | |
| FQPF4N60 データシート PDF :
| ||
General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Features
• 2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V
• Low gate charge ( typical 15 nC)
• Low Crss ( typical 8.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
| ページリンク（HTML）: 1 2 3 4 5 6 7 |
|
|
FQPF4N60と関連しているデータシートの一覧
| 部品番号 | コンポーネント説明 | メーカー | |
| FQPF3N60 | 600V N-Channel MOSFET |
|
Unspecified |
| FCA35N60 | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
| FQPF12N60CT | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
| FCA20N60F109 | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
| FQA19N60 | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
| FQPF3N60 | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
| SSP4N60B | 600V N-Channel MOSFET |
|
Unspecified |
| FQP12N60 | 600V N-Channel MOSFET |
|
Tiger Electronic |
| FQPF4N60 | 600V N-Channel MOSFET |
|
Tiger Electronic |
| FQP3N60C | 600V N-Channel MOSFET |
|
Fairchild Semiconductor |
| : |
English
简体中文
한국어
русский
español