datasheetbank_Logo     データシート検索エンジンとフリーデータシート
ホーム  >>>  KERSEMI  >>> FQPF2N60 PDF

FQPF2N60 データシート - Kersemi Electronic Co., Ltd.

Kersemi Electronic Co., Ltd. KERSEMI
その他の PDF  利用不可。
FQPF2N60 データシート PDF : FQPF2N60 pdf   
FQPF2N60 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductorÿs proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.

• 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



FQPF3N60 600V N-Channel MOSFET FQPF3N60 View Unspecified
FQA12N60 600V N-Channel MOSFET FQA12N60 View Fairchild Semiconductor
FQA10N60C 600V N-Channel MOSFET FQA10N60C View Fairchild Semiconductor
FCA35N60 600V N-Channel MOSFET FCA35N60 View Fairchild Semiconductor
FQP12N60 600V N-Channel MOSFET FQP12N60 View Fairchild Semiconductor
FQPF2N60 600V N-Channel MOSFET FQPF2N60 View Fairchild Semiconductor
FCB20N60 600V N-Channel MOSFET FCB20N60 View Fairchild Semiconductor
TSF5N60M 600V N-Channel MOSFET TSF5N60M View Unspecified
FQPF3N60 600V N-Channel MOSFET FQPF3N60 View Fairchild Semiconductor
FCA20N60F109 600V N-Channel MOSFET FCA20N60F109 View Fairchild Semiconductor

Share Link : 

English 简体中文 한국어 русский español

All Rights Reserved © 2014 - 2020  [ 個人情報保護方針 ] [ リクエストデータシート ]