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RF1S630SM9A データシート - Intersil

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RF1S630SM9A 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs Intersil
Intersil Intersil
RF1S630SM9A PDF データシート : RF1S630SM9A pdf   
IRF630 image

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 9A, 200V
• rDS(ON) = 0.400Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 “Guidelines for Soldering Surface Mount
      Components to PC Boards”


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