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HAF2002 データシート - Hitachi -> Renesas Electronics

部品番号コンポーネント説明メーカー
HAF2002 Silicon N Channel MOS FET Series Power Switching Hitachi
Hitachi -> Renesas Electronics Hitachi
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HAF2002 データシート PDF : HAF2002 pdf   
HAF2002 image

Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.

• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)

 

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