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FQPF12N60CT データシート - Fairchild Semiconductor

部品番号コンポーネント説明メーカー
FQPF12N60CT 600V N-Channel MOSFET Fairchild
Fairchild Semiconductor Fairchild
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FQPF12N60CT データシート PDF : FQPF12N60CT pdf   
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high
efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability

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