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FQP30N06 データシート - Fairchild Semiconductor

部品番号コンポーネント説明メーカー
FQP30N06 N-Channel QFET® MOSFET Fairchild
Fairchild Semiconductor Fairchild
その他の PDF  2003  
FQP30N06 データシート PDF : FQP30N06 pdf   
FQP30N06 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 30 A, 60 V, RDS(on) = 40 mΩ (Max.) @ VGS = 10 V, ID = 15 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 40 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating

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