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FQP12N60C Datasheet PDF - Fairchild Semiconductor

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FQP12N60C
Fairchild
Fairchild Semiconductor Fairchild
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  2003  
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FQP12N60C Datasheet PDF : FQP12N60C pdf     
FQP12N60C image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high
efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 12A, 600V, RDS(on)= 0.65Ω@VGS= 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

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部品番号
コンポーネント説明
PDF
メーカー
600V N-Channel MOSFET
Unspecified
600V N-Channel MOSFET
Unspecified
600V N-Channel MOSFET
Tiger Electronic
600V N-Channel MOSFET
Tiger Electronic
600V N-Channel MOSFET
Kersemi Electronic Co., Ltd.
600V / N-Channel Power MOSFET
ON Semiconductor
600V N-Channel MOSFET
Wisdom technologies
600V N-Channel MOSFET
Wisdom technologies
600V N-Channel MOSFET
Tiger Electronic
600V N-Channel MOSFET
Unspecified

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