FQA8N80C_F109 データシート - Fairchild Semiconductor
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FQA8N80C_F109 データシート PDF :
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
Features
• 8.4A, 800V, RDS(on)= 1.55Ω@VGS= 10 V
• Low gate charge ( typical 35 nC)
• Low Crss ( typical 13pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
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