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FDP10N60NZ データシート - Fairchild Semiconductor

FDP10N60NZ N-Channel UniFET™ II MOSFET 600V, 10A, 750mΩ Fairchild
Fairchild Semiconductor Fairchild
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FDP10N60NZ データシート PDF : FDP10N60NZ pdf   
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UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFETTM II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

• RDS(on) = 640 mΩ(Typ.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 23 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant

• Lighting
• Uninterruptible Power Supply

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