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M12L64164A-5BIG Datasheet PDF - [Elite Semiconductor Memory Technology Inc.

部品番号
コンポーネント説明
メーカー
M12L64164A-5BIG
ESMT
[Elite Semiconductor Memory Technology Inc. ESMT
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M12L64164A-5BIG Datasheet PDF : M12L64164A-5BIG pdf     
M12L64164A-5TIG image

GENERAL DESCRIPTION
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES
● JEDEC standard 3.3V power supply
● LVTTL compatible with multiplexed address
● Four banks operation
● MRS cycle with address key programs
   - CAS Latency (2 & 3)
   - Burst Length (1, 2, 4, 8 & full page)
   - Burst Type (Sequential & Interleave)
● All inputs are sampled at the positive going edge of the system clock
● DQM for masking
● Auto & self refresh
● 15.6 μ s refresh interval

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部品番号
コンポーネント説明
PDF
メーカー
1M X 16 Bit X 4 Banks Synchronous DRAM
AMIC Technology
1M X 16 Bit X 4 Banks Synchronous DRAM
AMIC Technology
Synchronous DRAM 1M x 16 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 1M x 16 Bit x 4 Banks
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1M X 32 Bit X 4 Banks Synchronous DRAM
AMIC Technology
1M X 16 Bit X 4 Banks Synchronous DRAM
AMIC Technology
1M x 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Samsung
Synchronous DRAM - 2M x 16 Bit x 4 Banks
Unspecified
Synchronous DRAM 4M x 16 Bit x 4 Banks
A-Data Technology
Synchronous DRAM 4M x 16 Bit x 4 Banks
A-Data Technology

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