Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter
The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector.
This unit is 8-lead DIP package. TLP351 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.
• Peak output current: ±0.6 A (max)
• Guaranteed performance over temperature: −40 to 100°C
• Supply current: 2 mA (max)
• Power supply voltage: 10 to 30 V
• Threshold input current : IF= 5 mA (max)
• Switching time (tpLH/tpHL) : 700 ns (max)
• Common mode transient immunity: 10 kV/μs
• Isolation voltage: 3750 Vrms
VDE Approved : DIN EN60747-5-2
Maximum Operating Insulation Voltage : 890VPK
Highest Permissible Over Voltage : 4000VPK