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SSF1020DC データシート - Silikron Semiconductor Co.,LTD.

Silikron Semiconductor Co.,LTD. SILIKRON
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SSF1020DC データシート PDF : SSF1020DC pdf   
SSF1020D image

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Features and Benefits:
■ Advanced trench MOSFET process technology
■ Special designed for PWM, load switching and general purpose applications
■ Ultra low on-resistance with low gate charge
■ Fast switching and reverse body recovery
■ 175℃ operating temperature


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