ホーム >>> Infineon >>> PTF081301E PDF

PTF081301E データシート - Infineon Technologies

部品番号	コンポーネント説明	メーカー
PTF081301E	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz	Infineon Technologies

その他の PDF	利用不可。
PTF081301E データシート PDF :

Description
The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical EDGE performance
- Average output power = 65 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 150 W
- Gain = 17 dB
- Efficiency = 55%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power

Page Links : 1 2 3 4 5 6 7 8 9 10 11

Other manufacturer searches related to PTF081301E

部品番号	コンポーネント説明	PDF	メーカー
MHVIC915NR2	746-960 MHz, 15 W, 27 V SINGLE N-CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER		Freescale Semiconductor
MHVIC915	CDMA, GSM/GSM EDGE 746–960 MHz, 15 W, 27 V RF LDMOS WIDEBAND INTEGRATED AMPLIFIER		Motorola => Freescale
LET20030C	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET9130	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET9060C	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET21030C	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET9085	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET19060C	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET8180	RF POWER TRANSISTORS Ldmos Enhanced Technology		STMicroelectronics
LET9002	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package		STMicroelectronics

Share Link :

English 简体中文 한국어 русский español