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NT2955G データシート - ON Semiconductor

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NT2955G Power MOSFET −60 V, −12 A, P−Channel DPAK ON-Semiconductor
ON Semiconductor ON-Semiconductor
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NT2955G データシート PDF : NT2955G pdf   
NTD2955 image

This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high−speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients.

Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and to Withstand High Energy in the Avalanche and Commutation Modes
• NVD Prefix for Automotive and Other Applications Requiring
  Unique Site and Control Change Requirements; AEC−Q101
  Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

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