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NT128S64VH4A0GM データシート - Nanya Technology

部品番号コンポーネント説明メーカー
NT128S64VH4A0GM 16Mx64 bit One Bank Small Outline SDRAM Module based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Nanya
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NT128S64VH4A0GM データシート PDF : NT128S64VH4A0GM pdf   
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Description
NT128S64VH4A0GM is a 144-pin Synchronous DRAM Small Outline Dual In-line Memory Module (SO DIMM) that is organized as a 16Mx64 high-speed memory array. The SO DIMM uses four 16Mx16 SDRAMs in 400mil TSOP II packages and achieves high-speed data transfer rates of up to 133 MHz by employing a prefetch / pipeline hybrid architecture that supports the JEDEC 1N rule while allowing very low burst power.

Features
• 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module
• 16Mx64 Synchronous DRAM SO DIMM
• Inputs and outputs are LVTTL (3.3V) compatible
• 10 Ohm Resistors on DQs
• Single 3.3V ± 0.3V Power Supply
• Single Pulsed RAS interface
• SDRAMs have four internal banks
• Fully Synchronous to positive Clock Edge
• Data Mask for Byte Read/Write control
• Auto Refresh (CBR) and Self Refresh
• Automatic and controlled Precharge Commands
• Programmable Operation:
    - CAS Latency: 2, 3
    - Burst Type: Sequential or Interleave
    - Burst Length: 1, 2, 4, 8,
    - Operation: Burst Read and Write or Multiple Burst Read with Single Write
• Suspend Mode and Power Down Mode
• 13/9/2 Addressing (Row/Column/Bank)
• 8192 refresh cycles distributed across 64ms
• Serial Presence Detect
• Gold contacts

 

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